Essay About Multisim Simulationtam Sin Yidesign Steps And Introductionintroductiona Bipolar Junction Transistor

Basic Electronic
[pic 1]UEEA1313 – BASIC ELECTRONICS ASSIGMENTDate of Submission:        5th August 2016Lecturer: Dr. KH YeohStudent NameStudent ID. NoCourseYear/SemesterLecture GroupCh’ng Kai Liang1503759MHY1S1L3Tam Sin Yi15048463EY1S1L3Soo Shi Jie1503888MHY1S1L3Leong Cin Wai16014383EY1S1L3Contribution Student NameContributionAgreement SignatureCh’ng Kai LiangDesign Steps and Procedures, Multisim SimulationTam Sin YiDesign Steps and Procedures, Multisim SimulationSoo Shi JieTheoretical Calculation Leong Cin WaiIntroductionTABLE OF CONTENTSCONTRIBUTION        iiTABLE OF CONTENTS        CHAPTER1        INTRODUCTION        11.1        Background        11.2        Aims and Objectives        22        Design and Circuit        23        Conclusion        8REFERENCES        1.0 INTRODUCTIONIntroductionA Bipolar Junction Transistor or, BJT, is commonly used as an amplifier of voltage in a circuit. A BJT consists of three terminals namely; the base, the emitter and the collector. A BJT is usually made up of silicon or germanium, both with a potential barrier of 0.7V and 0.3V respectively. The structure of a BJT is three layers of semiconductor connected to emitter and collector at either ends with the base terminal connected to the middle semiconductor in the BJT. A BJT can be either NPN or PNP, which is named after the structure of the BJT. For example, an NPN BJT is two n-type semi-conductor material with a p-type semi-conductor material in between. ‘P’ doped junction contains majority holes and ‘N’ doped junction contains majority carriers.